dm n6069sfg document number: d s 37821 rev. 4 - 2 1 of 7 www.diodes.com november 2016 ? diodes incorporated d mn6069sfg 60v n - channel enhancement mode mosfet powerdi product summary bv dss r ds(on) max i d max t c = + 25c 60 v 50m ? @ v gs = 10 v 1 8 a 63 m ? @ v gs = 4.5 v 1 6 a description and applications this mosfet is designed to minimize t he on - state resistance (r ds( on ) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C e nsures on - state losses are minimized ? small form factor thermally efficient package enables higher density end products (powerdi ? ) ? occupies just 33% of the board area occupied by so - 8 enabling smaller end product ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 3 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm n 6069s fg - 7 p ower di3333 - 8 2 , 0 00 /tape & reel DMN6069SFG - 13 p ower di3333 - 8 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : // www.diodes.com/products/packages.html . marking information top view bottom view powerdi3333 - 8 n69 = product type marking code yyww = date code marking yy = last two d igits of y ear (ex: 1 6 = 201 6 ) ww = week c ode (01 to 53) d s g equivalent circuit n 69 y yww powerdi is a registered trademark of diodes incorporated. s s s g d d d d pin 1
dm n6069sfg document number: d s 37821 rev. 4 - 2 2 of 7 www.diodes.com november 2016 ? diodes incorporated d mn6069sfg maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25c t a = + 70c i d 5.6 4. 5 a steady state t c = + 25c t c = + 70c i d 18 14.5 a pulsed drain curren t ( 380 s p ulse, d uty c ycle = 1% ) i dm 25 a maximum continuous body diode f orward current (note 6 ) i s 2.5 a avalanche current (note 7) l = 0.1 mh i a s 12 a avalanche energy (note 7) l = 0.1 mh e a s 7.2 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) p d 0.9 3 w thermal resistance, junction to ambient (note 5 ) s teady s tate r ja 1 34 c/w t<10s 82 total power dissipation (note 6 ) p d 2.4 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 5 3 c/w t<10s 3 3 thermal resistance, junction to case r j c 5 operating and storage temperature range t j, t stg - 55 to +150 c e lectrical characteristics ( t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 60 gs = 0v, i d = 250a j = +25c i dss ds = 60 v, v gs = 0v zero gate voltage drain current t j = + 1 5 0 c (note 9) i dss ds = 60 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 1 ds = v gs , i d = 250 a ds(on) ? gs = 10 v, i d = 4.5 a gs = 4.5 v, i d = 3 a diode forward voltage v sd gs = 0v, i s = 2.5 a on state drain current (note 9) i d(on) 20 ds R gs = 10 v dynamic characteristics (note 9 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 30 v, i d = 12 a total gate charge ( v gs = 10 v ) q g gs gd d( on ) ds = 30 v, i d = 12 a v g s = 10 v, r g = 6.0 ? r d( off ) f rr ? ? f = 4.5 a, di/dt = 100 a/s rr ? ? notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1 - inch square copper plate . 7 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing .
dm n6069sfg document number: d s 37821 rev. 4 - 2 3 of 7 www.diodes.com november 2016 ? diodes incorporated d mn6069sfg 0.0 5.0 10.0 15.0 20.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =3.0v v gs =3.5v v gs =4.5v v gs =5.0v v gs =10v 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 10v t a = - 55 a =25 a =85 a =125 a =150 ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =4.5v v gs =10v 0 0.04 0.08 0.12 0.16 0 5 10 15 20 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 4. typical on - resistance vs. drain current and temperature v gs = 4.5v t a = - 55 a =25 a =85 a =125 a =150 ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs =5v, i d =5a v gs =10v, i d =12a 0 0.02 0.04 0.06 0.08 0.1 0.12 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs =10v, i d =12a v gs =5v, i d =5a
dm n6069sfg document number: d s 37821 rev. 4 - 2 4 of 7 www.diodes.com november 2016 ? diodes incorporated d mn6069sfg 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d =1ma i d =250 a 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 i s , source current (a) v sd , source - drain voltage (v) figure 8. diode forward voltage vs. current v gs =0v t a = - 55 a =25 a =85 a =125 a =150 dss , leakage current (na) v ds , drain - source voltage (v) figure 9. typical drain - source leakge current vs. voltage 25 gs (v) qg (nc) figure 10. gate charge v ds =30v, i d =12a 10 100 1000 10000 0 10 20 30 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 11. typical junction capacitance f=1mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 a =25 gs =10v r ds(on) limited p w =10s dc p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm n6069sfg document number: d s 37821 rev. 4 - 2 5 of 7 www.diodes.com november 2016 ? diodes incorporated d mn6069sfg 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t)=r(t) * r ja r ja =134 /w duty cycle, d=t1/t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9
dm n6069sfg document number: d s 37821 rev. 4 - 2 6 of 7 www.diodes.com november 2016 ? diodes incorporated d mn6069sfg package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi3333 - 8 powerdi3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? b 0.27 0.37 0.32 b2 0.15 0.25 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e3 0.79 0.89 0.84 e4 1.60 1.70 1.65 e ? ? ? ? l 0.35 0.45 0.40 l1 ? ? ? ? z ? ? ? ? all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 d d2 e e b e2 a a3 pin #1 id seating plane l( 4x) a1 l1( 3x) b2( 4x) z( 4x) 1 8 e3 e4 x3 y3 x y c y1 y2 x1 x2 1 8
dm n6069sfg document number: d s 37821 rev. 4 - 2 7 of 7 www.diodes.com november 2016 ? diodes incorporated d mn6069sfg important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or prod ucts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporat ed does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channe l. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall in demnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized app lication. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are sp ecifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or sys tems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. f urther, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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